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 IPD06N03LA G IPS06N03LA G
IPF06N03LA G IPU06N03LA G
OptiMOS(R)2 Power-Transistor
Features * Ideal for high-frequency dc/dc converters * Qualified according to JEDEC for target application * N-channel, logic level * Excellent gate charge x R DS(on) product (FOM) * Superior thermal resistance * 175 C operating temperature * Pb-free lead plating; RoHS compliant
1)
Product Summary V DS R DS(on),max (SMD version) ID 25 5.7 50 V m A
Type
IPD06N03LA G
IPF06N03LA G
IPS06N03LA G
IPU06N03LA G
Package Ordering Code Marking
PG-TO252-3-11 Q67042-S4278 06N03LA
PG-TO252-3-23 Q67042-S4284 06N03LA
PG-TO251-3-11 Q67042-S4245 06N03LA
PG-TO251-3-21 Q67042-S4272 06N03LA
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C T C=25 C3) I D=45 A, R GS=25 I D=50 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C Value 50 50 350 225 6 20 83 -55 ... 175 55/175/56 mJ kV/s V W C Unit A
Rev. 1.71
page 1
2004-07-22
IPD06N03LA G IPS06N03LA G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 A V DS=25 V, V GS=0 V, T j=25 C V DS=25 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=4.5 V, I D=30 A, SMD version V GS=10 V, I D=30 A V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 Values typ.
IPF06N03LA G IPU06N03LA G
Unit max.
1.8 75 50
K/W
2 1
V
A
29
10 10 7.7 7.5 5.0 4.8 1 59
100 100 9.6 9.4 5.9 5.7 S nA m
1) 2)
J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 94 A. See figure 3 T j,max=150 C and duty cycle D <0.25 for V GS<-5 V
3) 4) 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.71
page 2
2004-07-22
IPD06N03LA G IPS06N03LA G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.92 Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=25 A, V GS=0 to 5 V 6.7 3.3 4.6 8.0 17 3.2 15 17 C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 2093 800 98 10 7.2 29 4.6 Values typ.
IPF06N03LA G IPU06N03LA G
Unit max.
2653 1064 147 14 11 43 6.9
pF
ns
9.0 4.2 6.9 11 22 19 23
nC
V nC
50 350 1.2
A
V
Reverse recovery charge
Q rr
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.71
page 3
2004-07-22
IPD06N03LA G IPS06N03LA G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V
IPF06N03LA G IPU06N03LA G
90 80
60
50 70 60 40
P tot [W]
I D [A]
50 40 30 20
30
20
10 10 0 0 50 100 150 200 0 0 50 100 150 200
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
1000
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
10
limited by on-state resistance
1 s
10 s
100
1
0.5
Z thJC [K/W]
100 s
I D [A]
DC 1 ms
0.2
0.1
10
10 ms
0.1
0.05 0.02 0.01 single pulse
1 0.1 1 10 100
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
100
V DS [V]
t p [s]
Rev. 1.71
page 4
2004-07-22
IPD06N03LA G IPS06N03LA G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
100
10 V 4.5 V
IPF06N03LA G IPU06N03LA G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
20 18
4.1 V 3V 3.2 V 3.5 V 3.8 V 4.1 V
90 80 70
16 14
50 40 30 20 10 0 0 1 2 3
3.2 V 3.5 V
R DS(on) [m]
60
3.8 V
12 10
4.5 V
I D [A]
8 6
10 V
4 2 0 0 20 40 60 80 100
3V 2.8 V
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
100
8 Typ. forward transconductance g fs=f(I D); T j=25 C
80 70
80 60 50
60
g fs [S]
40 20
175 C 25 C
I D [A]
40 30 20 10 0
0 0 1 2 3 4 5
0
10
20
30
40
50
60
V GS [V]
I D [A]
Rev. 1.71
page 5
2004-07-22
IPD06N03LA G IPS06N03LA G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
10 9 8 7 2 2.5
IPF06N03LA G IPU06N03LA G
98 %
400 A
R DS(on) [m]
typ
V GS(th) [V]
6 5 4 3 2 1 0 -60 -20 20 60 100 140 180
1.5
40 A
1
0.5
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. Capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
10000
1000
25 C Ciss
103
1000
Coss
100
175 C
175 C, 98%
C [pF]
102
Crss
100
I F [A]
10
25 C, 98%
10
1 10 20 30 0.0 0.5 1.0 1.5 2.0
0
V DS [V]
V SD [V]
Rev. 1.71
page 6
2004-07-22
IPD06N03LA G IPS06N03LA G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
IPF06N03LA G IPU06N03LA G
14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD
12
15 V
10
150 C 100 C 25 C
5V 20 V
8
10
V GS [V]
1 10 100 1000
I AV [A]
6
4
2
1
0 0 10 20 30
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
29
V GS
28 27 26
Qg
V BR(DSS) [V]
25 24 23 22 21 20 -60 -20 20 60 100 140 180
V g s(th)
Q g (th) Q gs
Q sw Q gd
Q gate
T j [C]
Rev. 1.71
page 7
2004-07-22
IPD06N03LA G IPS06N03LA G
Package Outline P-TO252-3-11: Outline
IPF06N03LA G IPU06N03LA G
Footprint:
Packaging:
Dimensions in mm Rev. 1.71 page 8 2004-07-22
IPD06N03LA G IPS06N03LA G
Package Outline P-TO252-3-23: Outline
IPF06N03LA G IPU06N03LA G
Footprint:
Dimensions in mm Rev. 1.71 page 9 2004-07-22
IPD06N03LA G IPS06N03LA G
Package Outline P-TO251-3-11: Outline
IPF06N03LA G IPU06N03LA G
P-TO251-3-21: Outline
Dimensions in inch [mm] Rev. 1.71 page 10 2004-07-22
IPD06N03LA G IPS06N03LA G
Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved.
IPF06N03LA G IPU06N03LA G
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.71
page 11
2004-07-22


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